IndiumV3, Russie, Analysis, bibRecord, 000120

Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current

Identifieur interne : 000120 ( Russie/Analysis ); précédent : 000119; suivant : 000121

Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current

Auteurs : RBID : Pascal:10-0304388

Descripteurs français

Pascal (Inist)
- Courant seuil, Laser semiconducteur, Guide onde optique, Etude expérimentale, Haute température, Dépôt chimique phase vapeur, Puits quantique, Gallium Arséniure, Indium Arséniure, Composé ternaire, Semiconducteur III-V, InGaAs/GaAs, GaInAs, GaAs, As Ga In, As Ga, Laser InGaAs, InGaAs, 4255P, 4279G.

English descriptors

KwdEn :
- CVD, Experimental study, Gallium Arsenides, High temperature, III-V semiconductors, Indium Arsenides, Optical waveguides, Quantum wells, Semiconductor lasers, Ternary compounds, Threshold current.

Abstract

We have investigated an edge-emitting tilted wave laser (TWL) with the active region based on GaInAs/GaAs quantum wells. In the TWL the wavelength stabilization is based on the coupling of the laser active waveguide cavity to a specially introduced thick epitaxial layer and the emission wavelength is defined by the combined cavity mode preferably by a single dominating mode. The TWL wafer has been grown by metal-organic chemical vapour deposition. Laser parameters have been investigated both in pulsed and CW mode in the temperature range of 15-60 °C. In the temperature window of 20-50 °C under CW excitation the lasers have shown high wavelength temperature stability with the temperature shift of 0.05 nm K^-1 and threshold current stability with the characteristic temperature of 500 K. The data obtained prove the concept of thermal stability in tilted wave lasers.

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Links to Exploration step

Pascal:10-0304388

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current</title>
<author><name sortKey="Gordeev, N Yu" uniqKey="Gordeev N">N. Yu Gordeev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>194021 St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Novikov, I I" uniqKey="Novikov I">I. I. Novikov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>194021 St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Chunareva, A V" uniqKey="Chunareva A">A. V. Chunareva</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>194021 St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St Petersburg</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Academic Physics and Technology University, Khlopina 8/3</s1>
<s2>194021 St Petersburg</s2>
<s3>RUS</s3>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Il Inskaya, N D" uniqKey="Il Inskaya N">N. D. Il Inskaya</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>194021 St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Shernyakov, Yu M" uniqKey="Shernyakov Y">Yu M. Shernyakov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>194021 St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Maximov, M V" uniqKey="Maximov M">M. V. Maximov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>194021 St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Payusov, A S" uniqKey="Payusov A">A. S. Payusov</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Academic Physics and Technology University, Khlopina 8/3</s1>
<s2>194021 St Petersburg</s2>
<s3>RUS</s3>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kalyuzhnyy, N A" uniqKey="Kalyuzhnyy N">N. A. Kalyuzhnyy</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>194021 St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Mintairov, S A" uniqKey="Mintairov S">S. A. Mintairov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>194021 St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Lantratov, V M" uniqKey="Lantratov V">V. M. Lantratov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>194021 St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Shchukin, V A" uniqKey="Shchukin V">V. A. Shchukin</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Technical University of Berlin, Institute for Solid State Physics, PN5-2, Hardenbergstr. 36</s1>
<s2>10623 Berlin</s2>
<s3>DEU</s3>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Ledentsov, N N" uniqKey="Ledentsov N">N. N. Ledentsov</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Technical University of Berlin, Institute for Solid State Physics, PN5-2, Hardenbergstr. 36</s1>
<s2>10623 Berlin</s2>
<s3>DEU</s3>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">10-0304388</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 10-0304388 INIST</idno>
<idno type="RBID">Pascal:10-0304388</idno>
<idno type="wicri:Area/Main/Corpus">004281</idno>
<idno type="wicri:Area/Main/Repository">004420</idno>
<idno type="wicri:Area/Russie/Extraction">000120</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0268-1242</idno>
<title level="j" type="abbreviated">Semicond. sci. technol.</title>
<title level="j" type="main">Semiconductor science and technology</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>CVD</term>
<term>Experimental study</term>
<term>Gallium Arsenides</term>
<term>High temperature</term>
<term>III-V semiconductors</term>
<term>Indium Arsenides</term>
<term>Optical waveguides</term>
<term>Quantum wells</term>
<term>Semiconductor lasers</term>
<term>Ternary compounds</term>
<term>Threshold current</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Courant seuil</term>
<term>Laser semiconducteur</term>
<term>Guide onde optique</term>
<term>Etude expérimentale</term>
<term>Haute température</term>
<term>Dépôt chimique phase vapeur</term>
<term>Puits quantique</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Composé ternaire</term>
<term>Semiconducteur III-V</term>
<term>InGaAs/GaAs</term>
<term>GaInAs</term>
<term>GaAs</term>
<term>As Ga In</term>
<term>As Ga</term>
<term>Laser InGaAs</term>
<term>InGaAs</term>
<term>4255P</term>
<term>4279G</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We have investigated an edge-emitting tilted wave laser (TWL) with the active region based on GaInAs/GaAs quantum wells. In the TWL the wavelength stabilization is based on the coupling of the laser active waveguide cavity to a specially introduced thick epitaxial layer and the emission wavelength is defined by the combined cavity mode preferably by a single dominating mode. The TWL wafer has been grown by metal-organic chemical vapour deposition. Laser parameters have been investigated both in pulsed and CW mode in the temperature range of 15-60 °C. In the temperature window of 20-50 °C under CW excitation the lasers have shown high wavelength temperature stability with the temperature shift of 0.05 nm K<sup>-1</sup>
 and threshold current stability with the characteristic temperature of 500 K. The data obtained prove the concept of thermal stability in tilted wave lasers.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0>
</fA01>
<fA02 i1="01"><s0>SSTEET</s0>
</fA02>
<fA03 i2="1"><s0>Semicond. sci. technol.</s0>
</fA03>
<fA05><s2>25</s2>
</fA05>
<fA06><s2>4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>GORDEEV (N. Yu)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>NOVIKOV (I. I.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>CHUNAREVA (A. V.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>IL'INSKAYA (N. D.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>SHERNYAKOV (Yu M.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>MAXIMOV (M. V.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>PAYUSOV (A. S.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>KALYUZHNYY (N. A.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>MINTAIROV (S. A.)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>LANTRATOV (V. M.)</s1>
</fA11>
<fA11 i1="11" i2="1"><s1>SHCHUKIN (V. A.)</s1>
</fA11>
<fA11 i1="12" i2="1"><s1>LEDENTSOV (N. N.)</s1>
</fA11>
<fA14 i1="01"><s1>Ioffe Physical-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>194021 St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Academic Physics and Technology University, Khlopina 8/3</s1>
<s2>194021 St Petersburg</s2>
<s3>RUS</s3>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Technical University of Berlin, Institute for Solid State Physics, PN5-2, Hardenbergstr. 36</s1>
<s2>10623 Berlin</s2>
<s3>DEU</s3>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
</fA14>
<fA20><s2>045003.1-045003.4</s2>
</fA20>
<fA21><s1>2010</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>21041</s2>
<s5>354000181962210040</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2010 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>12 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>10-0304388</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We have investigated an edge-emitting tilted wave laser (TWL) with the active region based on GaInAs/GaAs quantum wells. In the TWL the wavelength stabilization is based on the coupling of the laser active waveguide cavity to a specially introduced thick epitaxial layer and the emission wavelength is defined by the combined cavity mode preferably by a single dominating mode. The TWL wafer has been grown by metal-organic chemical vapour deposition. Laser parameters have been investigated both in pulsed and CW mode in the temperature range of 15-60 °C. In the temperature window of 20-50 °C under CW excitation the lasers have shown high wavelength temperature stability with the temperature shift of 0.05 nm K<sup>-1</sup>
 and threshold current stability with the characteristic temperature of 500 K. The data obtained prove the concept of thermal stability in tilted wave lasers.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B79G</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Courant seuil</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Threshold current</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
<s5>09</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Guide onde optique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Optical waveguides</s0>
<s5>11</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>29</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>29</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Haute température</s0>
<s5>30</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>High temperature</s0>
<s5>30</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Alta temperatura</s0>
<s5>30</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Dépôt chimique phase vapeur</s0>
<s5>31</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>CVD</s0>
<s5>31</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Puits quantique</s0>
<s5>47</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Quantum wells</s0>
<s5>47</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>50</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>50</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>52</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>52</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>53</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>53</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>InGaAs/GaAs</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>GaInAs</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Laser InGaAs</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>4279G</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fN21><s1>193</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
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   |wiki=   *** parameter Area/wikiCode missing *** 
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   |clé=     Pascal:10-0304388
   |texte=   Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current
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Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current

Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current

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